The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 18, 2021

Filed:

Nov. 05, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Peng Xu, Santa Clara, CA (US);

Chun Wing Yeung, Niskayuna, NY (US);

Chen Zhang, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78618 (2013.01); H01L 21/02603 (2013.01); H01L 21/30604 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 29/0673 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66742 (2013.01); H01L 29/66772 (2013.01); H01L 29/78654 (2013.01); H01L 29/78696 (2013.01);
Abstract

A semiconductor device includes a semiconductor wafer having one or more suspended nanosheet extending between first and second source/drain regions. A gate structure wraps around the nanosheet stack to define a channel region located between the source/drain regions. The semiconductor device further includes a first all-around source/drain contact formed in the first source/drain region and a second all-around source/drain contact formed in the second source/drain region. The first and second all-around source/drain contacts each include a source/drain epitaxy structure and an electrically conductive external portion that encapsulates the source/drain epitaxy structure.


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