The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Apr. 21, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Robin H. Chao, Wappingers Falls, NY (US);
Choonghyun Lee, Rensselaer, NY (US);
Chun W. Yeung, Niskayuna, NY (US);
Jingyun Zhang, Albany, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 21/225 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); B82Y 10/00 (2011.01); H01L 29/10 (2006.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); B82Y 10/00 (2013.01); H01L 21/02 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 21/2255 (2013.01); H01L 29/0665 (2013.01); H01L 29/0673 (2013.01); H01L 29/1079 (2013.01); H01L 29/42392 (2013.01); H01L 29/6653 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66742 (2013.01); H01L 29/775 (2013.01); H01L 29/78603 (2013.01);
Abstract
Provided is a nanosheet semiconductor device. In embodiments of the invention, the nanosheet semiconductor device includes a channel nanosheet formed over a substrate. The nanosheet semiconductor device includes a buffer layer formed between the substrate and the channel nanosheet. The buffer layer has a lower conductivity than the channel nanosheet.