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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12136671 B1

PDFFull Text
Date of Patent:
Nov. 05, 2024

Filed:

Dec. 31, 2021

Gate-all-around field-effect transistor having source side lateral end portion smaller than a thickness of channel portion and drain side lateral end portion

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jingyun Zhang, Albany, NY (US);

Choonghyun Lee, Rensselaer, NY (US);

Takashi Ando, Tuckahoe, NY (US);

Pouya Hashemi, White Plains, NY (US);

Alexander Reznicek, Troy, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Anthony Mauricio Pallone

Otterstedt & Kammer PLLC

Primary Examiner:

Anh D Mai

Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/161 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/78696 (2013.01);
Abstract

Channel engineering is employed to obtain a gate-all-around field-effect transistor having an asymmetric threshold voltage. A dual channel profile enables a steep potential distribution near the source side that enhances the lateral channel electric field and thus increases the carrier mobility.

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Quick Actions:

Zhang, Jingyun. (2024). Gate-all-around field-effect transistor having source side lateral end portion smaller than a thickness of channel portion and drain side lateral end portion (U.S. Patent No. 12136671). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12136671

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