The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2024

Filed:

May. 18, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Choonghyun Lee, Rensselaer, NY (US);

Soon-Cheon Seo, Glenmont, NY (US);

Injo Ok, Loudonville, NY (US);

Alexander Reznicek, Troy, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 21/324 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78642 (2013.01); H01L 21/324 (2013.01); H01L 29/1037 (2013.01); H01L 29/401 (2013.01); H01L 29/41741 (2013.01);
Abstract

A semiconductor structure, and a method of making the same includes a fin extending upward from a substrate, an epitaxially grown bottom source/drain region in direct contact with the substrate and a bottom portion of the fin. A bottom surface and sidewalls of a metal silicide layer are in direct contact with the epitaxially grown bottom source/drain region. A bottom spacer is located above and in direct contact with the metal silicide layer and a portion of the epitaxially grown bottom source/drain region not covered by the metal silicide layer, the bottom spacer surrounding the fin.


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