Loudonville, NY, United States of America

Injo Ok

This inventor holds 154 USPTO granted patents and 22 published patent applications and 4 EPO patents, primarily in Phase Change Memory (CPC class H01L29-66545). Top assignees: International Business Machines Corporation, Elpis Technologies Inc., Globalfoundries Inc.. Active years: 2016-2026.

USPTO Granted Patents = 154 

% Patents Active = 66.9

 

Average Co-Inventor Count = 4.1

ph-index = 10

Forward Citations = 357(Granted Patents)

Forward Citations (Not Self Cited) = 297(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Londonville, NY (US) (2017 - 2018)
  • Albany, NY (US) (2019)
  • Loudonville, NY (US) (2016 - 2024)

Company Filing History:


Years Active: 2016-2026

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Areas of Expertise:
Phase Change Memory Cell
Programming Current Control
Artificial Intelligence Devices
Memory Device Structures
ReRAM Formation
Magnetic Tunnel Junction
Vertical Field Effect Transistor
Capacitance Reduction
Multi-Layer Structures
Heater Technology
Nonvolatile Memristive Device
Resistive Memory Array
154 patents (USPTO):Explore Patents

Title: Injo Ok: Pioneering Innovations in Semiconductor Technologies

Introduction:

Injo Ok, hailing from Loudonville, NY (US), is a highly accomplished inventor and holder of 131 patents. Known for his groundbreaking work in the field of semiconductor technologies, Ok has made significant contributions to the development of memory structures and phase change memory devices. This article delves into his latest patents, career highlights, notable collaborations, and acknowledges his invaluable role in advancing the field of technology.

Latest Patents:

One of Injo Ok's most recent patents is for the "Antenna Assisted ReRAM Formation." This invention revolves around a memory structure that incorporates a Resistive Random Access Memory (ReRAM) module embedded in a substrate. Through the application of plasma, the voltage generated between the first electrode and second electrode stimulates the formation of a conductive filament in the ReRAM module, enabling efficient data storage.

Another notable patent is in the realm of phase change memory. Ok's innovative approach involves a semiconductor structure comprising a phase change element positioned above a heater. The heater, encompassing a conductive element surrounding a dielectric element with an air gap, optimizes the performance and energy efficiency of phase change memory devices.

Career Highlights:

Injo Ok has been associated with renowned companies in the semiconductor industry, including IBM (International Business Machines Corporation) and GlobalFoundries Inc. Working at IBM, a company known for its groundbreaking technological innovations, Ok had the opportunity to collaborate with exceptional minds and contribute to cutting-edge research and development initiatives.

Collaborations:

Throughout his career, Injo Ok has collaborated with numerous talented individuals, fostering an environment of innovation and knowledge-sharing. A notable collaborator is Soon-Cheon Seo, who has made significant contributions to the field of memory technologies. Together, they have pushed the boundaries of what is possible in semiconductor devices and memory structures. Additionally, Ok has collaborated with Balasubramanian Pranatharthiharan, whose expertise has enhanced the efficiency and performance of memory devices.

Conclusion:

Injo Ok's exceptional track record of 131 patents and his significant contributions to the field of semiconductor technologies have solidified his reputation as a pioneering inventor. His latest patents, such as the Antenna Assisted ReRAM Formation and phase change memory device, showcase his commitment to pushing the boundaries of innovation. By collaborating with industry giants like IBM and collaborating with esteemed colleagues, Ok has played an instrumental role in shaping the landscape of modern technology. With his continued dedication and ingenuity, Injo Ok will undoubtedly contribute to further advancements in the semiconductor industry.

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