The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2023
Filed:
Apr. 20, 2018
International Business Machines Corporation, Armonk, NY (US);
Takashi Ando, Yorktown Heights, NY (US);
Pouya Hashemi, Yorktown Heights, NY (US);
Choonghyun Lee, Albany, NY (US);
Alexander Reznicek, Albany, NY (US);
Jingyun Zhang, Albany, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A semiconductor device includes a substrate material with a semiconductor material with a predetermined crystal orientation, a gate stack having a plurality of nanosheet channel layers, each nanosheet channel layer being controlled by metal gate layers located above and below the nanosheet channel layer, each nanosheet channel layer having the same semiconductor material and crystal orientation as that of the substrate, and a source/drain region on opposite sides of the gate stack. Each source/drain region includes bridging structures respectively connected to each nanosheet channel layer.