The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 05, 2026
Filed:
Nov. 30, 2022
International Business Machines Corporation, Armonk, NY (US);
Jennifer Toy, San Leandro, CA (US);
Alexander Reznicek, Troy, NY (US);
Jingyun Zhang, Albany, NY (US);
Sagarika Mukesh, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure includes a nanosheet channel stack disposed on a semiconductor substrate. The nanosheet channel stack includes one or more layers of a semiconducting material providing nanosheet channels for one or more nanosheet field-effect transistors and an insulator layer as the bottom most layer disposed on the semiconductor substrate. The semiconductor structure further includes an epitaxial oxide spacer layer disposed on outer ends of a bottom surface of the insulator layer and extending downwardly into the substrate; shallow trench isolation regions disposed adjacent the nanosheet channel stack and extending downwardly from a top surface of the semiconductor substrate, wherein a portion of each of the shallow trench isolation regions is disposed on an outer sidewall of the respective epitaxial oxide spacer layer; and a gate surrounding the nanosheet channel stack and on a top surface of each of the shallow trench isolation regions.