The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Dec. 05, 2023
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Liqiao Qin, Albany, NY (US);
Tao Li, Slingerlands, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Jingyun Zhang, Albany, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/23 (2025.01); H10W 10/00 (2026.01); H10W 10/20 (2026.01); H10W 20/41 (2026.01);
U.S. Cl.
CPC ...
H10D 64/254 (2025.01); H10W 10/021 (2026.01); H10W 10/20 (2026.01); H10W 20/427 (2026.01);
Abstract
A semiconductor structure that includes a top source/drain (S/D) middle-of-line (MOL) contact via including a first side and a second side. The semiconductor structure also includes a first air gap located adjacent the first side of the top S/D MOL contact via, and a second air gap located adjacent the second side of the top S/D MOL contact via.
Qin, Liqiao. (2026). Semiconductor structure with two air gaps on two sides of a top source-drain middle-of-line contact via (U.S. Patent No. 12696516). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12696516
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile