The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2026
Filed:
Dec. 09, 2021
International Business Machines Corporation, Armonk, NY (US);
Ruqiang Bao, Niskayuna, NY (US);
Koji Watanabe, Yokohama, JP;
Muthumanickam Sankarapandian, Niskayuna, NY (US);
Jingyun Zhang, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure is formed using a nanosheet stack that is over a semiconductor substrate. The semiconductor structure includes multiple layers of work function that surround each channel of a plurality of channels in the nanosheet stack and are on the semiconductor substrate under the nanosheet stack. Adjacent layers of the work function metal in the semiconductor structure are separated by an oxide material. The oxide material is a very thin layer of an oxide with a thickness of several angstroms or less. The semiconductor structure includes an n-type work function metal that is over an outer layer of the multiple layers of the work function metal. The n-type work function metal can be an aluminum containing metal that is covered by a capping material under a gate electrode material.