The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Aug. 09, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Reinaldo Vega, Mahopac, NY (US);

Julien Frougier, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Jingyun Zhang, Albany, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/43 (2025.01); H10D 62/10 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 30/43 (2025.01); H10D 62/121 (2025.01); H10D 84/85 (2025.01);
Abstract

A semiconductor structure is provided that includes a tunable and shared non-conductive layer as part of a gate stack of at least a pair of nanosheet GAA transistors with a shared metal gate electrode. The semiconductor structure has a tunable non-conductive material/gate dielectric area ratio where the non-conductive material is not constrained to a periphery of the nanosheet stack cross section.


Find Patent Forward Citations

Vega, Reinaldo. (2026). Negative capacitance gate-all-around transistor with tunable capacitance ratio (U.S. Patent No. 12557341). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12557341

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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