The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Nov. 17, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Alexander Reznicek, Troy, NY (US);
Bahman Hekmatshoartabari, White Plains, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Choonghyun Lee, Chigasaki, JP;
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 48/00 (2025.01); H01L 21/02 (2006.01); H01L 21/225 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01);
U.S. Cl.
CPC ...
H10D 48/383 (2025.01); H01L 21/02532 (2013.01); H01L 21/0259 (2013.01); H01L 21/2252 (2013.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6741 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 64/017 (2025.01); H10D 64/018 (2025.01);
Abstract
A semiconductor tunnel FET (field effect transistor) including a plurality of nanosheet channels disposed between a first source/drain region and a second source/drain region. The first source/drain region includes a p-type material; and the second source/drain region includes an n-type material.