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For the Inventor, By the Inventor

Chigasaki, Japan

ChoongHyun Lee

This inventor holds 14 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 2024-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: ChoongHyun Lee. Retrieved from https://idiyas.com/inventor/choonghyun-lee-ejkalp1p

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 14

% Patents Active = 92.9

Average Co-Inventor Count = 3.8

ph-index = 1


Company Filing History:

goldMedal14 out of 166,351 
 
International Business Machines Corporation
 patents

Years Active: 2024-2026

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14 patents (USPTO):Explore Patents
1. 12628367 - Vertical transistors having improved control of parasitic capacitance and gate-to-contact short circuits (2026-05-12),
2. 12484262 - Tunnel field effect transistor devices (2025-11-25),
3. 12396225 - Method to release nano sheet after nano sheet fin recess (2025-08-19),
4. 12255106 - Multi-Vt nanosheet devices (2025-03-18),
5. 12230676 - Nanosheet device with tri-layer bottom dielectric isolation (2025-02-18),
6. 12156395 - Metal gate patterning for logic and SRAM in nanosheet devices (2024-11-26),
7. 12132098 - Uniform interfacial layer on vertical fin sidewalls of vertical transport field-effect transistors (2024-10-29),
8. 12094949 - Fin-type field effect transistor having a wrap-around gate with bottom isolation and inner spacers to reduce parasitic capacitance (2024-09-17),
9. 12009422 - Self aligned top contact for vertical transistor (2024-06-11),
10. 12009395 - Self-aligned block for vertical FETs (2024-06-11),
11. 11996480 - Vertical transistor with late source/drain epitaxy (2024-05-28),
12. 11990530 - Replacement-channel fabrication of III-V nanosheet devices (2024-05-21),
13. 11949011 - Vertical transistor with gate encapsulation layers (2024-04-02),
14. 11923438 - Field-effect transistor with punchthrough stop region (2024-03-05),

Title: The Innovative Journey of ChoongHyun Lee

Introduction: ChoongHyun Lee, a pioneering inventor hailing from Chigasaki, Japan, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: ChoongHyun Lee holds several patents in various technological domains, showcasing his continuous commitment to innovation and creativity.

Career Highlights: Throughout his illustrious career, ChoongHyun Lee has demonstrated a remarkable ability to transform ideas into tangible inventions that have revolutionized the industry. His dedication to pushing the boundaries of technology has earned him recognition as a visionary inventor.

Collaborations: ChoongHyun Lee has collaborated with leading research institutions, universities, and innovative companies to further develop his inventions and bring them to the market. His collaborative efforts have resulted in the successful implementation of cutting-edge technologies.

Conclusion: ChoongHyun Lee's passion for innovation, coupled with his relentless pursuit of excellence, has solidified his position as a trailblazing inventor in the world of technology. His contributions continue to inspire future generations of inventors to push the limits of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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