The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2026

Filed:

Nov. 11, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Choonghyun Lee, Chigasaki, JP;

Ardasheir Rahman, Schenectady, NY (US);

Xin Miao, San Jose, CA (US);

Brent A. Anderson, Jericho, VT (US);

Alexander Reznicek, Troy, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/01 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/025 (2025.01); H10D 64/01 (2025.01); H10D 84/0133 (2025.01); H10D 84/016 (2025.01); H10D 84/0195 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01); H10D 84/85 (2025.01);
Abstract

Embodiments of the invention are directed to a method of forming an integrated circuit (IC). The method includes performing fabrication operations that form the IC. The fabrication operations include forming a channel fin. A gate structure is formed along a sidewall surface of the channel fin. The gate structure includes a conductive gate having an L-shape profile, and the L-shape profile includes a conductive gate foot region. The conductive gate foot region is replaced with a dielectric foot region.


Find Patent Forward Citations

Loading…