The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2024
Filed:
Sep. 21, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Kangguo Cheng, Schenectady, NY (US);
Shogo Mochizuki, Mechanicville, NY (US);
Juntao Li, Cohoes, NY (US);
Choonghyun Lee, Chigasaki, JP;
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 27/088 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/7851 (2013.01);
Abstract
A semiconductor structure includes a substrate comprising a semiconductor material, and a fin on the substrate. The fin includes a first portion formed from the semiconductor material and a second portion including a channel region. The first portion has a first thickness and the second portion has a second thickness greater than the first thickness. A spacer is disposed on sides of the first portion of the fin.