The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 17, 2024

Filed:

Sep. 24, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Choonghyun Lee, Chigasaki, JP;

Chanro Park, Clifton Park, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); H01L 21/0259 (2013.01); H01L 21/28229 (2013.01); H01L 29/0665 (2013.01); H01L 29/66553 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 2029/42388 (2013.01);
Abstract

Embodiments of the invention include a semiconductor device having a fin-shaped channel with a bottom surface, sidewalls and a top surface. A first source or drain (S/D) region is communicatively coupled to the fin-shaped channel, and a sub-channel region is between the bottom surface of the fin-shaped channel and a substrate. A U-shaped dielectric region within a first portion of the sub-channel region, wherein the U-shaped dielectric region includes a bottom isolation layer and a first inner spacer region. A wrap-around gate structure extends around the bottom surface, the sidewalls and the top surface of the fin-shaped channel, wherein a bottom region of the wrap-around gate structure is within a second portion of the sub-channel region.


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