The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
Nov. 30, 2021
International Business Machines Corporation, Armonk, NY (US);
Chen Zhang, Guilderland, NY (US);
ChoongHyun Lee, Chigasaki, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure including a bottom source drain region arranged on a substrate, a semiconductor channel region extending vertically upwards from a top surface of the bottom source drain region, a metal gate disposed around the semiconductor channel region, a top source drain region above the semiconductor channel region, an amorphous silicon layer directly on top of the metal gate, and an oxidation layer directly on top of the amorphous silicon layer, where the amorphous silicon layer and the oxidation layer together completely separate the metal gate from a surrounding interlevel dielectric layer.