IDiyas

For the Inventor, By the Inventor

Albany, NY, United States of America

Huimei Zhou

USPTO Granted Patents = 48 

Average Co-Inventor Count = 4.8

ph-index = 4

Forward Citations = 57(Granted Patents)


Company Filing History:

goldMedal47 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal1 out of 51 
 
Elpis Technologies Inc.
 patents

Years Active: 2017-2025

where 'Filed Patents' based on already Granted Patents

48 patents (USPTO):
1. 12490511 - Stacked complementary field effect transistors (2025-12-02),
2. 12464696 - Static random access memory device with stacked FETs (2025-11-04),
3. 12422465 - In-situ chip design for pulse IV self-heating evaluation (2025-09-23),
4. 12414336 - Semiconductor structure having stacked power rails (2025-09-09),
5. 12414328 - Co-integrating gate-all-around nanosheet transistors and comb-nanosheet transistors (2025-09-09),
6. 12414312 - Back-end-of-line thin film resistor (2025-09-09),
7. 12402391 - Stressed material within gate cut region (2025-08-26),
8. 12356680 - Nanosheet device with air-gaped source/drain regions (2025-07-08),
9. 12300617 - Self-aligned buried power rail cap for semiconductor devices (2025-05-13),
10. 12237325 - Three-dimensional field effect device (2025-02-25),
11. 12119341 - Electrostatic discharge diode having dielectric isolation layer (2024-10-15),
12. 12107147 - Self-aligned gate contact for VTFETs (2024-10-01),
13. 12107014 - Nanosheet transistors with self-aligned gate cut (2024-10-01),
14. 11955369 - Recessed local interconnect formed over self-aligned double diffusion break (2024-04-09),
15. 11908888 - Metal-insulator-metal capacitor structure supporting different voltage applications (2024-02-20),

Title: The Innovative Journey of Inventor Huimei Zhou

Introduction: Inventor Huimei Zhou, based in Albany, NY, is a distinguished figure in the field of semiconductor devices, holding an impressive portfolio of 35 patents. His groundbreaking work has significantly contributed to the advancement of technology in the industry.

Latest Patents: Among his latest patents is the "Recessed local interconnect formed over self-aligned double diffusion break", a revolutionary technique for reducing parasitic capacitance in semiconductor devices. Zhou's approach involves burying a metal local interconnect in a cavity around the DDB region of a semiconductor substrate, thereby optimizing device performance.

Another notable patent is the "Metal-insulator-metal capacitor structure supporting different voltage applications", which features a unique MIM capacitor structure capable of accommodating various voltage requirements. This innovation showcases Zhou's expertise in designing efficient and versatile electronic components.

Career Highlights: Huimei Zhou has made significant contributions during his tenure at renowned companies such as IBM and Elpis Technologies Inc. His wealth of experience and technical acumen have enabled him to drive innovation and spearhead cutting-edge projects in the semiconductor industry.

Collaborations: Throughout his career, Zhou has collaborated closely with esteemed coworkers Dechao Guo and Ruqiang Bao. Their collective expertise and innovative mindset have led to the successful development of groundbreaking technologies and patents.

Conclusion: Inventor Huimei Zhou's relentless pursuit of innovation and commitment to technological advancement have solidified his position as a key figure in the field of semiconductor devices. His impressive portfolio of patents reflects his exceptional talent and dedication to pushing the boundaries of what is possible in the industry.

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