The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2026

Filed:

Dec. 17, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Huimei Zhou, Albany, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Miaomiao Wang, Albany, NY (US);

Alexander Reznicek, Troy, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/00 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6735 (2025.01); H10D 30/509 (2025.01); H10D 30/6757 (2025.01); H10D 62/118 (2025.01); H10D 84/0172 (2025.01); H10D 84/038 (2025.01); H10D 84/85 (2025.01);
Abstract

A semiconductor structure comprises a first nanosheet device having at least one first channel layer and a first gate, a second nanosheet device disposed above the first nanosheet device and having at least one second channel layer and a second gate, and an isolation layer disposed between the first nanosheet device and the second nanosheet device to electrically isolate the first nanosheet device and the second nanosheet device.


Find Patent Forward Citations

Quick Actions:

Zhou, Huimei. (2026). Separate gate complementary field-effect transistor (U.S. Patent No. 12550371). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12550371

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