The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2026

Filed:

Jun. 19, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Baozhen Li, South Burlington, VT (US);

Chih-Chao Yang, Glenmont, NY (US);

Huimei Zhou, Albany, NY (US);

Yueming Xu, Wappingers Falls, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10D 1/00 (2025.01); H10D 1/68 (2025.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 23/5283 (2013.01); H10D 1/042 (2025.01); H10D 1/714 (2025.01); H10D 1/716 (2025.01);
Abstract

A semiconductor device including a metal insulator metal capacitor (MIM capacitor) within back end of line circuitry of the semiconductor device, where the MIM capacitor surrounds a first Mx metal line. A semiconductor device including a metal insulator metal capacitor (MIM capacitor) within back end of line circuitry of the semiconductor device, where the MIM capacitor surrounds a first Mx metal line, where a lower horizontal surface of the MIM capacitor is vertically adjacent to an upper horizontal surface of an Mx-1 metal line. A method including forming a metal insulator metal capacitor (MIM capacitor) within back end of line circuitry of the semiconductor device, where the MIM capacitor surrounds a first Mx metal line.


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