The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2026
Filed:
May. 31, 2023
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/40 (2026.01); H10D 62/10 (2025.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10W 20/496 (2026.01); H10D 62/118 (2025.01); H10W 20/42 (2026.01); H10W 20/427 (2026.01);
Abstract
A semiconductor structure including an array of transistors, a backside power rail, wherein the backside power rail directly contacts a bottommost surface of a shallow trench isolation region, and a metal-insulator-metal (MIM) capacitor embedded in a backside power delivery network beneath the array of transistors, wherein the MIM capacitor directly contacts a bottommost surface of the backside power rail.
Quick Actions:
Zhou, Huimei. (2026). High density backside mim capacitor (U.S. Patent No. 12660612). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12660612
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile