The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2026

Filed:

Sep. 19, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Huimei Zhou, Albany, NY (US);

Terence B. Hook, Jericho, VT (US);

Yoo-Mi Lee, Montvale, NJ (US);

Feng Liu, Niskayuna, NY (US);

Chen Zhang, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 89/60 (2025.01); H10D 86/01 (2025.01);
U.S. Cl.
CPC ...
H10D 89/611 (2025.01); H10D 86/0214 (2025.01);
Abstract

Embodiments are disclosed for a semiconductor structure. The semiconductor structure includes a first nanosheet layer. The first nanosheet layer includes a first channel region, and a heavily doped epitaxial region of a first type. Further, the semiconductor structure includes a second nanosheet layer. The second nanosheet layer includes a second channel region, a heavily doped epitaxial region of a second type disposed above the first nanosheet layer, and a first gate surrounding the first channel region and the second channel region. Additionally, the semiconductor structure includes a protection diode. The protection diode includes a source, a drain, and a second gate. The drain is connected to the first gate, and the second gate is connected to the source.


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