The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Nov. 28, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Juntao Li, Cohoes, NY (US);
Min Gyu Sung, Latham, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Julien Frougier, Albany, NY (US);
Chanro Park, Clifton Park, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/306 (2006.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/30604 (2013.01); H10D 30/6735 (2025.01); H10D 62/121 (2025.01);
Abstract
One or more systems, devices, and/or methods of fabrication provided herein relate to nanosheet transistors with support dielectric pillars. According to one embodiment, a transistor device can comprise an active transistor fin and a support dielectric pillar located adjacent to the active transistor fin, wherein the support dielectric pillar stabilizes the active transistor fin.