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Singapore, Singapore

Globalfoundries Singapore Pte. Ltd.

Calculating rank

USPTO Granted Patents = 1,065

% Expired Patents = 21.1

EPO Patents = 6

Forward Citations = 2,655

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874 inventors (with patents filed for the assignee):

Eng Huat Toh (235 out of 237 patents)

Shyue Seng Tan (192 out of 199 patents)

Juan Boon Tan (133 out of 154 patents)

4. Wanbing Yi (79 out of 82 patents)

5. Kiok Boone Elgin Quek (70 out of 71 patents)

6. Elgin Kiok Quek (58 out of 107 patents)

7. Purakh Raj Verma (56 out of 147 patents)

8. Xinshu Cai (43 out of 44 patents)

9. Danny Pak-Chum Shum (43 out of 72 patents)

10. Curtis Chun-I Hsieh (39 out of 39 patents)

11. Yi Jiang (38 out of 38 patents)

12. Guowei Zhang (37 out of 39 patents)

13. Elgin Kiok Boone Quek (35 out of 45 patents)

14. Khee Yong Lim (33 out of 39 patents)

15. Alex See (33 out of 84 patents)

Core Competencies:

Semiconductor Devices

Memory Structures

Electrostatic Discharge Protection

Photodetectors

Thin Film Resistor

Three-Terminal Memory Cells

High-Voltage Devices

Trench Isolation Structures

Non-Volatile Memory

Avalanche Photodetectors

Silicon Controlled Rectifiers

Magnetic Field Sensors

1,065 patents: Sort by Forward Citations

1. 12787276 - Circuit structure and related multi-time programmable (MTP) memory cell (2026-11-03),

2. 12777924 - Capacitors with floating metal layers (2026-10-27),

3. 12777650 - Transistor coupled to terminals for injecting charge carriers into pair of spacers (2026-10-27),

4. 12772507 - Gated body transistors (2026-10-20),

5. 12772490 - Laterally-diffused metal-oxide-semiconductor devices with a field plate (2026-10-20),

6. 12765099 - Photodiode with deep trench isolation structures (2026-10-13),

7. 12765039 - Ferroelectric capacitive memory devices with a multiple-work-function electrode (2026-10-13),

8. 12757512 - Structures including a photodetector and multiple deep trenches (2026-10-06),

9. 12757423 - Junction field effect transistor with bottom gate underlying drain and optionally partially underlying top gate and method (2026-10-06),

10. 12757390 - Antifuses capable of forming localized conductive links (2026-10-06),

11. 12751102 - Photodiode with deep trench isolation structures (2026-09-29),

12. 12743608 - Neuron circuits for a spiking neural network based on magnetic-tunnel-junction layer stacks connected in series (2026-09-22),

13. 12733267 - Single-photon avalanche diodes with hybrid trench isolation structures (2026-09-08),

14. 12727254 - Electrostatic device (2026-09-01),

15. 12696758 - Semiconductor devices and methods of forming the same (2026-07-28),

Company Overview

Globalfoundries Singapore Pte. Ltd. specializes in the development and manufacturing of advanced semiconductor devices. The company focuses on a range of core technologies including memory structures, electrostatic discharge protection, and photodetectors. With expertise in thin film resistors and high-voltage devices, Globalfoundries plays a significant role in the semiconductor industry. Its innovative trench isolation structures and three-terminal memory cells contribute to the advancement of electronic components, supporting various applications across multiple sectors.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Nov 3 2026

1,065 Patents

#6 in Singapore

#6 in Singapore

#956 in the World

Singapore, Singapore

Globalfoundries Singapore Pte. Ltd.

Forward Citations = 2,655

874 inventors:

Eng Huat Toh (235 out of 237 patents)

Shyue Seng Tan (192 out of 199 patents)

Juan Boon Tan (133 out of 154 patents)

4. Wanbing Yi (79 out of 82 patents)

5. Kiok Boone Elgin Quek (70 out of 71 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Globalfoundries Singapore Pte. Ltd.. Retrieved from https://idiyas.com/company/globalfoundries-singapore

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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