IDiyas

For the Inventor, By the Inventor

Singapore, Singapore

Curtis Chun-I Hsieh

USPTO Granted Patents = 36 

 

Average Co-Inventor Count = 4.9

ph-index = 4

Forward Citations = 76(Granted Patents)


Company Filing History:

goldMedal36 out of 1,016 
 
Globalfoundries Singapore Pte. Ltd.
 patents

Years Active: 2018-2025

Loading Chart...
Loading Chart...
36 patents (USPTO):
1. 12484234 - Resistive random-access memory elements with lateral sidewall switching (2025-11-25),
2. 12341058 - Air gap through at least two metal layers (2025-06-24),
3. 11978510 - Memory devices and methods of forming the same (2024-05-07),
4. 11832538 - Resistive memory elements with an embedded heating electrode (2023-11-28),
5. 11690306 - Correlated electron resistive memory device and integration schemes (2023-06-27),
6. 11641789 - Memory cells and methods for forming memory cells (2023-05-02),
7. 11522131 - Resistive memory device and methods of making such a resistive memory device (2022-12-06),
8. 11515475 - Resistive random access memory devices (2022-11-29),
9. 11289649 - Non-volatile memory elements with a narrowed electrode (2022-03-29),
10. 11270938 - Semiconductor devices and methods of forming semiconductor devices (2022-03-08),
11. 11233195 - Memory devices and methods of forming memory devices (2022-01-25),
12. 11127784 - Integrated circuits with embedded memory structures and methods for fabricating the same (2021-09-21),
13. 11127459 - Memory devices and methods of forming the same (2021-09-21),
14. 11081523 - Memory devices and methods of forming memory devices (2021-08-03),
15. 11031251 - Self-aligned planarization of low-k dielectrics and method for producing the same (2021-06-08),

Title: Innovator Spotlight: Curtis Chun-I Hsieh

Introduction:

Curtis Chun-I Hsieh, a distinguished inventor based in Singapore, SG, has made significant contributions to the field of memory devices through his innovative approaches. With an impressive portfolio of 34 patents, Curtis Chun-I Hsieh is a trailblazer in the realm of resistive memory technology.

Latest Patents:

Curtis Chun-I Hsieh's latest patents revolve around memory devices and methods of enhancing their functionality. His work on resistive random-access (ReRAM) memory devices, incorporating reference cells to improve sensing yield, showcases his commitment to pushing the boundaries of technological advancement. Additionally, his developments in resistive memory elements with embedded heating electrodes highlight his prowess in creating cutting-edge solutions for memory storage.

Career Highlights:

Currently affiliated with Globalfoundries Singapore Pte. Ltd., Curtis Chun-I Hsieh thrives in an environment that fosters innovation and collaboration. His expertise in memory technologies has positioned him as a key figure in the industry, shaping the future of memory storage devices.

Collaborations:

In his professional journey, Curtis Chun-I Hsieh has had the opportunity to collaborate with accomplished individuals such as Juan Boon Tan and Wanbing Yi. These collaborations have not only enriched his work but have also resulted in groundbreaking advancements in the field of memory devices.

Conclusion:

In conclusion, Curtis Chun-I Hsieh's dedication to innovation and his remarkable achievements in memory device technology underscore his status as a visionary inventor. His contributions have not only enhanced the way we store and access data but have also paved the way for future advancements in the field. Curtis Chun-I Hsieh stands as a testament to the power of ingenuity and perseverance in the realm of technological innovation.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…