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For the Inventor, By the Inventor

Singapore, Singapore

Curtis Chun-I Hsieh

This inventor holds 39 USPTO granted patents and 6 published patent applications and 1 EPO patent, primarily in Resistive Memory Technology. Top assignee: Globalfoundries Singapore Pte. Ltd.. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Curtis Chun-I Hsieh. Retrieved from https://idiyas.com/inventor/curtis-chun-i-hsieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 39 

% Patents Active = 97.4

 

Average Co-Inventor Count = 5.0

ph-index = 4

Forward Citations = 84(Granted Patents)


Company Filing History:

goldMedal39 out of 1,062 
 
Globalfoundries Singapore Pte. Ltd.
 patents

Years Active: 2018-2026

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Areas of Expertise:
Resistive Memory
RRAM Devices
Integrated Circuits
Memory Cell Fabrication
Non-Volatile Memory
Embedded MRAM
Correlated Electron Memory
Thermal Management
Dielectric Structures
Memory Device Methods
Capacitor Integration
Logic Device Applications
39 patents (USPTO):Explore Patents
1. 12610796 - Structure including discrete dielectric member for protecting first air gap during forming of second air gap (2026-04-21),
2. 12557563 - Layer stacks for a resistive memory element (2026-02-17),
3. 12500119 - Air gap with inverted T-shaped lower portion extending through at least one metal layer, and related method (2025-12-16),
4. 12484234 - Resistive random-access memory elements with lateral sidewall switching (2025-11-25),
5. 12341058 - Air gap through at least two metal layers (2025-06-24),
6. 11978510 - Memory devices and methods of forming the same (2024-05-07),
7. 11832538 - Resistive memory elements with an embedded heating electrode (2023-11-28),
8. 11690306 - Correlated electron resistive memory device and integration schemes (2023-06-27),
9. 11641789 - Memory cells and methods for forming memory cells (2023-05-02),
10. 11522131 - Resistive memory device and methods of making such a resistive memory device (2022-12-06),
11. 11515475 - Resistive random access memory devices (2022-11-29),
12. 11289649 - Non-volatile memory elements with a narrowed electrode (2022-03-29),
13. 11270938 - Semiconductor devices and methods of forming semiconductor devices (2022-03-08),
14. 11233195 - Memory devices and methods of forming memory devices (2022-01-25),
15. 11127784 - Integrated circuits with embedded memory structures and methods for fabricating the same (2021-09-21),

Title: Innovator Spotlight: Curtis Chun-I Hsieh

Introduction:

Curtis Chun-I Hsieh, a distinguished inventor based in Singapore, SG, has made significant contributions to the field of memory devices through his innovative approaches. With an impressive portfolio of 34 patents, Curtis Chun-I Hsieh is a trailblazer in the realm of resistive memory technology.

Latest Patents:

Curtis Chun-I Hsieh's latest patents revolve around memory devices and methods of enhancing their functionality. His work on resistive random-access (ReRAM) memory devices, incorporating reference cells to improve sensing yield, showcases his commitment to pushing the boundaries of technological advancement. Additionally, his developments in resistive memory elements with embedded heating electrodes highlight his prowess in creating cutting-edge solutions for memory storage.

Career Highlights:

Currently affiliated with Globalfoundries Singapore Pte. Ltd., Curtis Chun-I Hsieh thrives in an environment that fosters innovation and collaboration. His expertise in memory technologies has positioned him as a key figure in the industry, shaping the future of memory storage devices.

Collaborations:

In his professional journey, Curtis Chun-I Hsieh has had the opportunity to collaborate with accomplished individuals such as Juan Boon Tan and Wanbing Yi. These collaborations have not only enriched his work but have also resulted in groundbreaking advancements in the field of memory devices.

Conclusion:

In conclusion, Curtis Chun-I Hsieh's dedication to innovation and his remarkable achievements in memory device technology underscore his status as a visionary inventor. His contributions have not only enhanced the way we store and access data but have also paved the way for future advancements in the field. Curtis Chun-I Hsieh stands as a testament to the power of ingenuity and perseverance in the realm of technological innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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