The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2022

Filed:

May. 14, 2020
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Curtis Chun-I Hsieh, Singapore, SG;

Wei-Hui Hsu, Singapore, SG;

Wanbing Yi, Singapore, SG;

Yi Jiang, Singapore, SG;

Kai Kang, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/122 (2013.01); H01L 27/24 (2013.01); H01L 45/124 (2013.01); H01L 45/1253 (2013.01); H01L 45/145 (2013.01); H01L 45/1675 (2013.01);
Abstract

The present disclosure generally relates to memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices. The present disclosure provides a memory device including an opening in a dielectric structure, the opening having a sidewall, a first electrode on the sidewall of the opening, a spacer layer on the first electrode, a resistive layer on the first electrode and upon an upper surface of the spacer layer, and a second electrode on the resistive layer.


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