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For the Inventor, By the Inventor

Singapore, Singapore

Wanbing Yi

USPTO Granted Patents = 76 

 

Average Co-Inventor Count = 4.9

ph-index = 7

Forward Citations = 268(Granted Patents)

Forward Citations (Not Self Cited) = 228(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal73 out of 1,020 
 
Globalfoundries Singapore Pte. Ltd.
 patents
silverMedal2 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal1 out of 1 
 
Alsephina Innovations Inc.
 patent
4. 1 out of 1,477 
 
Agency for Science, Technology and Research
 patents
where one patent can have more than one assignee

Years Active: 2015-2025

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Areas of Expertise:
Capacitor Structures
Three-Dimensional Integration
Resistive Memory Devices
Magnetic Tunnel Junctions
Embedded MRAM Technology
Integrated Circuits
Memory Device Fabrication
Galvanic Isolation
Magnetic Shielding
Self-Aligned Planarization
High-Density Memory Structures
Selective Light Shielding
76 patents (USPTO):Explore Patents
1. 12506050 - Face bonded semiconductor device with through oxide via and metal plug (2025-12-23),
2. 12500119 - Air gap with inverted T-shaped lower portion extending through at least one metal layer, and related method (2025-12-16),
3. 12388006 - Capacitor and airgap structure (2025-08-12),
4. 12009326 - SRAM bit cells with three-dimensional integration (2024-06-11),
5. 11978510 - Memory devices and methods of forming the same (2024-05-07),
6. 11791379 - Galvanic isolation using isolation break between redistribution layer electrodes (2023-10-17),
7. 11690306 - Correlated electron resistive memory device and integration schemes (2023-06-27),
8. 11641789 - Memory cells and methods for forming memory cells (2023-05-02),
9. 11522131 - Resistive memory device and methods of making such a resistive memory device (2022-12-06),
10. 11515475 - Resistive random access memory devices (2022-11-29),
11. 11270938 - Semiconductor devices and methods of forming semiconductor devices (2022-03-08),
12. 11233195 - Memory devices and methods of forming memory devices (2022-01-25),
13. 11217496 - Test pad with crack stop protection (2022-01-04),
14. 11127784 - Integrated circuits with embedded memory structures and methods for fabricating the same (2021-09-21),
15. 11127459 - Memory devices and methods of forming the same (2021-09-21),

Title: The Innovative Journey of Wanbing Yi

Introduction: Wanbing Yi, a visionary inventor hailing from Singapore, SG, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Wanbing Yi holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Wanbing Yi has worked tirelessly to push the boundaries of technological advancements. His work has not only revolutionized industries but has also inspired a new generation of inventors.

Collaborations: Throughout his career, Wanbing Yi has collaborated with leading research institutions, universities, and tech companies to further develop and commercialize his inventions. His collaborative spirit has led to the successful implementation of cutting-edge technologies in various sectors.

Conclusion: Wanbing Yi's passion for innovation, coupled with his relentless drive to create a positive impact on society, solidifies his position as a trailblazing inventor in the global technological landscape.

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