Wanbing Yi

This inventor holds 80 USPTO granted patents and 16 published patent applications and 1 EPO patent, primarily in Memory Devices (CPC class H01L). Top assignees: Globalfoundries Singapore Pte. Ltd., Globalfoundries Inc., Agency for Science, Technology and Research. Active years: 2015-2026.

USPTO Granted Patents = 80 (Patent Applications = 16)

% Patents Active = 86.3

EPO Patents = 1 (Patent Applications = 5)

Average Co-Inventor Count = 4.8

ph-index = 8

Forward Citations = 286(Granted Patents)

Forward Citations (Not Self Cited) = 228(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

77 out of 1,053

Globalfoundries Singapore Pte. Ltd.

Agency for Science, Technology and Research

patents

4. 1 out of 1

Alsephina Innovations Inc.

patent

where one patent can have more than one assignee

Years Active: 2015-2026

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Areas of Expertise:

Resistive RAM

Integrated Circuits

3D Memory Integration

Memory Cells

Capacitor Structures

Semiconductor Devices

Galvanic Isolation

Embedded MRAM

Magnetic Shielding

Thin Film Resistors

Dielectric Members

Memory Device Fabrication

80 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12660257 - Galvanic isolation using isolation break between redistribution layer electrodes (2026-06-16),

2. 12610796 - Structure including discrete dielectric member for protecting first air gap during forming of second air gap (2026-04-21),

3. 12557563 - Layer stacks for a resistive memory element (2026-02-17),

4. 12555705 - Thin film resistor with viabar structure (2026-02-17),

5. 12506050 - Face bonded semiconductor device with through oxide via and metal plug (2025-12-23),

6. 12500119 - Air gap with inverted T-shaped lower portion extending through at least one metal layer, and related method (2025-12-16),

7. 12388006 - Capacitor and airgap structure (2025-08-12),

8. 12009326 - SRAM bit cells with three-dimensional integration (2024-06-11),

9. 11978510 - Memory devices and methods of forming the same (2024-05-07),

10. 11791379 - Galvanic isolation using isolation break between redistribution layer electrodes (2023-10-17),

11. 11690306 - Correlated electron resistive memory device and integration schemes (2023-06-27),

12. 11641789 - Memory cells and methods for forming memory cells (2023-05-02),

13. 11522131 - Resistive memory device and methods of making such a resistive memory device (2022-12-06),

14. 11515475 - Resistive random access memory devices (2022-11-29),

15. 11270938 - Semiconductor devices and methods of forming semiconductor devices (2022-03-08),

Title: The Innovative Journey of Wanbing Yi

Introduction: Wanbing Yi, a visionary inventor hailing from Singapore, SG, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Wanbing Yi holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Wanbing Yi has worked tirelessly to push the boundaries of technological advancements. His work has not only revolutionized industries but has also inspired a new generation of inventors.

Collaborations: Throughout his career, Wanbing Yi has collaborated with leading research institutions, universities, and tech companies to further develop and commercialize his inventions. His collaborative spirit has led to the successful implementation of cutting-edge technologies in various sectors.

Conclusion: Wanbing Yi's passion for innovation, coupled with his relentless drive to create a positive impact on society, solidifies his position as a trailblazing inventor in the global technological landscape.