The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 06, 2026
Filed:
Feb. 05, 2024
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Wanbing Yi, Singapore, SG;
Yong Chau Ng, Singapore, SG;
Xiaodong Li, Singapore, SG;
Weichu Qiu, Singapore, SG;
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
Structures including a photodetector, such as a single-photon avalanche diode, and related methods. The structure comprises a semiconductor layer, a photodetector including a well in the semiconductor layer, and a deep trench isolation region including a first conductor layer extending through the semiconductor layer. The deep trench isolation region surrounds the photodetector. The structure further comprises a bond pad, and an electrical connection including a second conductor layer extending from the bond pad through the semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile