The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Jun. 21, 2022
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Wensheng Deng, Singapore, SG;
Kemao Lin, Singapore, SG;
Curtis Chun-I Hsieh, Singapore, SG;
Wanbing Yi, Singapore, SG;
Liu Xinfu, Singapore, SG;
Rui Tze Toh, Singapore, SG;
Yanxia Shao, Singapore, SG;
Shucheng Yin, Singapore, SG;
Jason Kin Wei Wong, Singapore, SG;
Yung Fu Chong, Singapore, SG;
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
Methods of forming semiconductor devices including an air gap extending through at least one metal layer, and the semiconductor device so formed, are disclosed. The air gap has a lower portion that contacts a silicide layer over a gate body of a transistor gate and has an inverted T-shape over the gate body. The air gap reduces the capacitance between a transistor gate in a device layer and adjacent wires and vias used to contact the source and drain of the transistor.