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For the Inventor, By the Inventor

Singapore, Singapore

Yung Fu Chong

USPTO Granted Patents = 46 

Average Co-Inventor Count = 3.7

ph-index = 11

Forward Citations = 352(Granted Patents)


Company Filing History:

goldMedal26 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (corporation)
 patents
silverMedal17 out of 164,197 
 
International Business Machines Corporation
 patents
bronzeMedal16 out of 1,020 
 
Globalfoundries Singapore Pte. Ltd.
 patents
4. 2 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents
5. 2 out of 14,724 
 
Infineon Technologies Ag
 patents
6. 1 out of 629 
 
Nanyang Technological University
 patents
7. 1 out of 806 
 
National University of Singapore
 patents
8. 2 out of 832,843 
Other
 patents
where one patent can have more than one assignee

Years Active: 2002-2025

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Areas of Expertise:
Transistor Fabrication
Integrated Circuits
Silicide Structures
Source/Drain Engineering
Strained Channel Transistors
MOSFET Technology
Silicon Germanium Devices
Dielectric Layer Incorporation
Laser Annealing Techniques
Defect Engineering
Memory Bitline Fabrication
Advanced Semiconductor Devices
46 patents (USPTO):Explore Patents
1. 12500119 - Air gap with inverted T-shaped lower portion extending through at least one metal layer, and related method (2025-12-16),
2. 12142673 - Transistor with wrap-around extrinsic base (2024-11-12),
3. 11855196 - Transistor with wrap-around extrinsic base (2023-12-26),
4. 11855195 - Transistor with wrap-around extrinsic base (2023-12-26),
5. 11776844 - Contact via structures of semiconductor devices (2023-10-03),
6. 10566441 - Methods of forming integrated circuits with solutions to interlayer dielectric void formation between gate structures (2020-02-18),
7. 10395987 - Transistor with source-drain silicide pullback (2019-08-27),
8. 9390962 - Methods for fabricating device substrates and integrated circuits (2016-07-12),
9. 8912567 - Strained channel transistor and method of fabrication thereof (2014-12-16),
10. 8643119 - Substantially L-shaped silicide for contact (2014-02-04),
11. 8450775 - Method to control source/drain stressor profiles for stress engineering (2013-05-28),
12. 8324031 - Diffusion barrier and method of formation thereof (2012-12-04),
13. 8288825 - Formation of raised source/drain structures in NFET with embedded SiGe in PFET (2012-10-16),
14. 8211761 - Semiconductor system using germanium condensation (2012-07-03),
15. 8138055 - Semiconductor devices having pFET with SiGe gate electrode and embedded SiGe source/drain regions and methods of making the same (2012-03-20),

Title: Yung Fu Chong: Pioneering Inventor from Singapore

Introduction: Yung Fu Chong is a renowned inventor hailing from Singapore, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yung Fu Chong holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With a career spanning over two decades, Yung Fu Chong has worked with leading tech companies and research institutions, spearheading projects that have revolutionized various industries.

Collaborations: Throughout his career, Yung Fu Chong has collaborated with top scientists, engineers, and inventors from around the world, fostering a culture of innovation and knowledge sharing.

Conclusion: Yung Fu Chong's dedication to pushing the boundaries of technology and his passion for creating impactful inventions have solidified his reputation as a trailblazer in the world of innovation.

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