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For the Inventor, By the Inventor

Singapore, Singapore

Yung Fu Chong

This inventor holds 47 USPTO granted patents and 8 published patent applications, primarily in Semiconductor Devices. Top assignees: Chartered Semiconductor Manufacturing Ltd (Corporation), Globalfoundries Singapore Pte. Ltd., International Business Machines Corporation. Active years: 2002-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yung Fu Chong. Retrieved from https://idiyas.com/inventor/yung-fu-chong

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 47 

% Patents Active = 55.3

Average Co-Inventor Count = 3.7

ph-index = 12

Forward Citations = 354(Granted Patents)


Company Filing History:

goldMedal26 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (Corporation)
 patents
silverMedal17 out of 1,058 
 
Globalfoundries Singapore Pte. Ltd.
 patents
bronzeMedal17 out of 166,325 
 
International Business Machines Corporation
 patents
4. 2 out of 15,023 
 
Infineon Technologies Ag
 patents
5. 2 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
6. 1 out of 682 
 
Nanyang Technological University
 patents
7. 1 out of 851 
 
National University of Singapore
 patents
8. 2 out of 834,453 
Other
 patents
where one patent can have more than one assignee

Years Active: 2002-2026

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Areas of Expertise:
Transistor
Silicide
Integrated Circuits
MOSFET
Source/Drain
Strained Channel
Stress Engineering
Germanium
Dielectric
Defect Engineering
Epitaxy
Condensation
47 patents (USPTO):Explore Patents
1. 12564029 - Contact via structures of semiconductor devices (2026-02-24),
2. 12500119 - Air gap with inverted T-shaped lower portion extending through at least one metal layer, and related method (2025-12-16),
3. 12142673 - Transistor with wrap-around extrinsic base (2024-11-12),
4. 11855196 - Transistor with wrap-around extrinsic base (2023-12-26),
5. 11855195 - Transistor with wrap-around extrinsic base (2023-12-26),
6. 11776844 - Contact via structures of semiconductor devices (2023-10-03),
7. 10566441 - Methods of forming integrated circuits with solutions to interlayer dielectric void formation between gate structures (2020-02-18),
8. 10395987 - Transistor with source-drain silicide pullback (2019-08-27),
9. 9390962 - Methods for fabricating device substrates and integrated circuits (2016-07-12),
10. 8912567 - Strained channel transistor and method of fabrication thereof (2014-12-16),
11. 8643119 - Substantially L-shaped silicide for contact (2014-02-04),
12. 8450775 - Method to control source/drain stressor profiles for stress engineering (2013-05-28),
13. 8324031 - Diffusion barrier and method of formation thereof (2012-12-04),
14. 8288825 - Formation of raised source/drain structures in NFET with embedded SiGe in PFET (2012-10-16),
15. 8211761 - Semiconductor system using germanium condensation (2012-07-03),

Title: Yung Fu Chong: Pioneering Inventor from Singapore

Introduction: Yung Fu Chong is a renowned inventor hailing from Singapore, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yung Fu Chong holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for a better future.

Career Highlights: With a career spanning over two decades, Yung Fu Chong has worked with leading tech companies and research institutions, spearheading projects that have revolutionized various industries.

Collaborations: Throughout his career, Yung Fu Chong has collaborated with top scientists, engineers, and inventors from around the world, fostering a culture of innovation and knowledge sharing.

Conclusion: Yung Fu Chong's dedication to pushing the boundaries of technology and his passion for creating impactful inventions have solidified his reputation as a trailblazer in the world of innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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