The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Oct. 25, 2021
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Xinshu Cai, Singapore, SG;

Shyue Seng Tan, Singapore, SG;

Vibhor Jain, Williston, VT (US);

John J. Pekarik, Underhill, VT (US);

Kien Seen Daniel Chong, Singapore, SG;

Yung Fu Chong, Singapore, SG;

Judson R. Holt, Ballston Lake, NY (US);

Qizhi Liu, Lexington, MA (US);

Kenneth J. Stein, Sandy Hook, CT (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/66 (2006.01); H01L 29/45 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7371 (2013.01); H01L 29/1004 (2013.01); H01L 29/45 (2013.01); H01L 29/66242 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to transistor with wrap-around extrinsic base and methods of manufacture. The structure includes: a substrate; a collector region within the substrate; an emitter region over the substrate and which comprises mono-crystal silicon based material; an intrinsic base under the emitter region and comprising semiconductor material; and an extrinsic base surrounding the emitter and over the intrinsic base.


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