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Underhill, VT, United States of America

John Joseph Pekarik

USPTO Granted Patents = 99 (Patent Applications = 18)

EPO Patents = 2 (Patent Applications = 7)

Average Co-Inventor Count = 4.2

ph-index = 9

Forward Citations = 326(Granted Patents)

Forward Citations (Not Self Cited) = 288(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Essex Junction, VT (US) (2014)
Underhill, VT (US) (2000 - 2024)

Company Filing History:

Globalfoundries U.S. Inc.

35 out of 164,197

International Business Machines Corporation

20 out of 5,671

Globalfoundries Inc.

4. 6 out of 1,020

Globalfoundries Singapore Pte. Ltd.

Globalpoundries U.S. Inc.

Years Active: 2000-2025

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Areas of Expertise:

Bipolar Junction Transistors

Heterojunction Bipolar Transistors

Transistor Structures

Field Effect Transistors

Photodetectors

Optofluidic Sensors

Thermally Conductive Interconnects

Dual Thickness Fuse Structures

Trench-Based Photodiodes

Self-Aligned Emitter

Lateral Bipolar Transistors

Tunable Breakdown Voltage FETs

99 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12471294 - Array arrangements of vertical bipolar junction transistors (2025-11-11),

2. 12464745 - Bipolar junction transistor arrays (2025-11-04),

3. 12396221 - Junction field-effect transistors (2025-08-19),

4. 12336206 - Heterojunction bipolar transistors with a cut stress liner (2025-06-17),

5. 12327776 - Heat sink for face bonded semiconductor device (2025-06-10),

6. 12324227 - Heterojunction bipolar transistor with buried trap rich isolation region (2025-06-03),

7. 12211929 - Heterojunction bipolar transistors with terminals having a non-planar arrangement (2025-01-28),

8. 12142673 - Transistor with wrap-around extrinsic base (2024-11-12),

9. 12107124 - Bipolar transistors (2024-10-01),

10. 11862717 - Lateral bipolar transistor structure with superlattice layer and method to form same (2024-01-02),

11. 11855196 - Transistor with wrap-around extrinsic base (2023-12-26),

12. 11855195 - Transistor with wrap-around extrinsic base (2023-12-26),

13. 11848192 - Heterojunction bipolar transistor with emitter base junction oxide interface (2023-12-19),

14. 11791334 - Heterojunction bipolar transistor with buried trap rich isolation region (2023-10-17),

15. 11784224 - Lateral bipolar transistor structure with base over semiconductor buffer and related method (2023-10-10),

Title: The Innovative Journey of John Joseph Pekarik

Introduction:

John Joseph Pekarik, a talented inventor hailing from Underhill, VT (US), has made significant contributions to the field of innovations with his creative mind and dedication.

Latest Patents:

John Joseph Pekarik holds several patents in various technological areas, showcasing his versatility and expertise in inventing cutting-edge solutions to real-world problems.

Career Highlights:

Throughout his illustrious career, John Joseph Pekarik has consistently pushed the boundaries of what is possible, with a keen focus on developing inventions that improve efficiency and enhance people's lives.

Collaborations:

John Joseph Pekarik has collaborated with leading research institutions and universities to further his inventions, demonstrating his commitment to advancing technology through partnerships and shared knowledge.

Conclusion:

In conclusion, John Joseph Pekarik stands as a beacon of innovation in the vibrant landscape of inventors, with a legacy that continues to inspire future generations of inventors and innovators.

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