The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Aug. 26, 2022
Globalfoundries U.s. Inc., Malta, NY (US);
Saloni Chaurasia, Leander, TX (US);
Jeffrey Johnson, Essex Junction, VT (US);
Vibhor Jain, Essex Junction, VT (US);
Crystal R. Kenney, Waterford, NY (US);
Sudesh Saroop, Poughkeepsie, NY (US);
Teng-Yin Lin, Clifton Park, NY (US);
John J. Pekarik, Underhill, VT (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Structures for a varactor diode and methods of forming same. The structure comprises a first semiconductor layer including a section on a substrate, a second semiconductor layer on the section of the first semiconductor layer, a third semiconductor layer on the second semiconductor layer, and a doped region in the section of the first semiconductor layer. The section of the first semiconductor layer and the doped region have a first conductivity type, and the second semiconductor layer comprises silicon-germanium having a second conductivity type opposite to the first conductivity type, and the third semiconductor layer has the second conductivity type. The doped region contains a higher concentration of a dopant of the first conductivity type than the section of the first semiconductor layer. The second semiconductor layer abuts the first section of the first semiconductor layer along an interface, and the doped region is positioned adjacent to the interface.