The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2025
Filed:
Aug. 08, 2023
Globalfoundries U.s. Inc., Malta, NY (US);
Vibhor Jain, Williston, VT (US);
John J. Ellis-Monaghan, Grand Isle, VT (US);
Anthony K. Stamper, Burlington, VT (US);
Steven M. Shank, Jericho, VT (US);
John J. Pekarik, Underhill, VT (US);
GLOBALFOUNDRIES U.S. Inc., Malta, NY (US);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to heterojunction bipolar transistors (HBTs) with a buried trap rich isolation region and methods of manufacture. The structure includes: a first heterojunction bipolar transistor; a second heterojunction bipolar transistor; and a trap rich isolation region embedded within a substrate underneath both the first heterojunction bipolar transistor and the second heterojunction bipolar transistor.