The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2025
Filed:
Oct. 20, 2022
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Xinshu Cai, Singapore, SG;
Shyue Seng Tan, Singapore, SG;
Vibhor Jain, Essex Junction, VT (US);
John J. Pekarik, Underhill, VT (US);
Assignee:
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/65 (2025.01); H10D 62/13 (2025.01);
U.S. Cl.
CPC ...
H10D 62/116 (2025.01); H10D 30/658 (2025.01); H10D 62/151 (2025.01);
Abstract
Structures for a junction field-effect transistor and methods of forming a structure for a junction field-effect transistor. The structure comprises a first gate on a top surface of a semiconductor substrate, a second gate beneath the top surface of the semiconductor substrate, and a channel region in the semiconductor substrate. The first gate is positioned between a source and a drain, and the channel region positioned between the first gate and the second gate.