The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Dec. 22, 2021
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Xinshu Cai, Singapore, SG;
Shyue Seng Tan, Singapore, SG;
Vibhor Jain, Williston, VT (US);
John J. Pekarik, Underhill, VT (US);
Robert J. Gauthier, Jr., Williston, VT (US);
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/735 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1004 (2013.01); H01L 29/6625 (2013.01); H01L 29/66325 (2013.01); H01L 29/735 (2013.01); H01L 29/7393 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to bipolar transistors and methods of manufacture. The structure includes: an intrinsic base region; an emitter region above the intrinsic base region; a collector region under the intrinsic base region; and an extrinsic base region comprising metal material, and which surrounds the intrinsic base region and the emitter region.