The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 07, 2024

Filed:

Jul. 28, 2021
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Curtis Chun-I Hsieh, Singapore, SG;

Wei-Hui Hsu, Singapore, SG;

Wanbing Yi, Singapore, SG;

Yi Jiang, Singapore, SG;

Kai Kang, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); H10B 63/30 (2023.02); H10N 70/063 (2023.02); G11C 2013/0045 (2013.01); G11C 2013/0054 (2013.01); G11C 2213/79 (2013.01);
Abstract

The present disclosure generally relates to memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices incorporating reference cells for achieving high sensing yield. The present disclosure provides a memory device including a main cell structure including a switching element arranged between a pair of conductors, and a reference cell structure electrically coupled to the main cell structure. The reference cell structure includes a switching element arranged between a pair of conductors, in which the switching element of the reference cell structure has a dimension that is different from a dimension of the switching element of the main cell structure.


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