The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 21, 2026

Filed:

Jun. 09, 2022
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Curtis Chun-I Hsieh, Singapore, SG;

Wei-Hui Hsu, Singapore, SG;

Wanbing Yi, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/764 (2013.01); H01L 21/7682 (2013.01);
Abstract

A structure includes a first air gap including a first opening defined in a first dielectric layer and a second dielectric layer over the first opening and closing an end portion of the first opening. A second air gap may be over at least a portion of the first air gap. The second air gap includes a second opening defined in the second dielectric layer and a third dielectric layer over the second opening and closing an end portion of the second opening. The second air gap has a pointed lower end portion. In another version, the structure includes a first air gap in a first dielectric layer, a second dielectric layer over the first air gap, and a discrete dielectric member positioned in the second dielectric layer and aligned over the first air gap.


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