The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Jun. 09, 2022
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Chun-I Hsieh, Singapore, SG;

Ee Jan Khor, Singapore, SG;

Wei-Hui Hsu, Singapore, SG;

Wanbing Yi, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5223 (2013.01); H01L 21/76802 (2013.01); H01L 21/7682 (2013.01); H01L 23/528 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to capacitor structures and methods of manufacture. The structure includes: an airgap provided within a dielectric material; an insulator material across a top of the airgap and on a surface of the dielectric material; and a capacitor provided within the dielectric material and lined with the insulator material.


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