The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2026

Filed:

Feb. 06, 2023
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Curtis Chun-I Hsieh, Singapore, SG;

Kai Kang, Singapore, SG;

Wanbing Yi, Singapore, SG;

Yongshun Sun, Singapore, SG;

Eng-Huat Toh, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H01L 23/528 (2006.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/841 (2023.02); H01L 23/5283 (2013.01); H10B 63/30 (2023.02); H10B 63/34 (2023.02); H10N 70/063 (2023.02); H10N 70/883 (2023.02);
Abstract

Structures that include a layer stack for a resistive memory element and methods of forming a structure that includes a layer stack for a resistive memory element. The structure comprises a resistive memory element including a first electrode, a second electrode, and a switching layer disposed between the second electrode and the first electrode. The first electrode includes a first layer and a second layer between the first layer and the switching layer. The switching layer has a first thickness, and the second layer of the first electrode has a second thickness that is less than the first thickness of the switching layer.


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