Johann Alsmeier

San Jose, CA, United States of America

Johann Alsmeier

Average Co-Inventor Count = 3.2

ph-index = 46

Forward Citations = 6,883(Granted Patents)

Forward Citations (Not Self Cited) = 5,530(Sep 21, 2024)

DiyaCoin DiyaCoin 16.58 

Inventors with similar research interests:


Location History:

  • Milpitas, CA (US) (2013 - 2014)
  • San Jose, CA (US) (2012 - 2024)


Years Active: 2012-2025

where 'Filed Patents' based on already Granted Patents

211 patents (USPTO):

Title: Johann Alsmeier: Pioneering Innovations in Three-Dimensional Memory Devices

Introduction:

Johann Alsmeier, a renowned inventor and engineer based in San Jose, CA, has made significant contributions to the field of semiconductor technology, specifically in the development of three-dimensional memory devices. With over 200 patents to his name, Alsmeier has revolutionized the way we store and access data. In this article, we will delve into his latest patents, explore his career highlights, and highlight his notable collaborations with industry leaders.

Latest Patents:

Alsmeier's recent patents have mainly focused on advanced three-dimensional memory devices. Two of his notable inventions include:

1. Three-dimensional memory device including low-k drain-select-level isolation structures and methods of forming the same:

This patent describes a three-dimensional memory device that features an alternating stack of insulating and electrically conductive layers. The device incorporates memory opening fill structures and drain-select-level isolation structures, which utilize low-k dielectric materials or air gaps to enhance performance and reduce power consumption.

2. Three-dimensional memory device with wiggled drain-select-level isolation structure and methods of manufacturing the same:

This patent introduces a three-dimensional memory device with an innovative drain-select-level isolation structure. The structure includes wiggles to improve electrical connectivity and may cut through upper portions of memory opening fill structures. Alternatively, it may consist of vertically-extending and laterally-protruding dielectric material portions, ensuring effective isolation between electrically conductive layers.

Career Highlights:

Throughout his career, Alsmeier has held prominent positions at leading technology companies, where he has made significant contributions to the field. Notable highlights include his tenure at Sandisk Technologies Inc. and Sandisk 3D LLC. While specifics of his work at these companies are not available, it can be inferred that he played a key role in their research and development of advanced memory technologies.

Collaborations:

As a highly respected inventor, Alsmeier has collaborated with various talented professionals in the industry. Two of his notable colleagues are Yanli Zhang and James K. Kai. Unfortunately, details of their collaborations or specific projects are not available at this time. Nonetheless, these collaborations serve as a testament to Alsmeier's ability to work effectively with other experts in the field.

Conclusion:

Johann Alsmeier's groundbreaking work in three-dimensional memory devices has undoubtedly pushed the boundaries of semiconductor technology. With over 200 patents and a career marked by notable collaborations, Alsmeier continues to shape the industry's landscape. His dedication to innovation and his ability to solve complex technological challenges have earned him recognition as a pioneering inventor in the field of memory devices.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…