The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Sep. 06, 2022
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Yanli Zhang, San Jose, CA (US);
Johann Alsmeier, San Jose, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 51/20 (2023.01); H10B 51/10 (2023.01); H10B 51/30 (2023.01); H10B 51/40 (2023.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H10B 51/30 (2023.02); H10B 51/10 (2023.02); H10B 51/40 (2023.02);
Abstract
A memory device includes a semiconductor channel, a gate electrode, and a stack located between the semiconductor channel and the gate electrode. The stack includes, from one side to another, a first ferroelectric material portion, a second ferroelectric material portion, and a gate dielectric portion that contacts the semiconductor channel.