The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 17, 2024
Filed:
Apr. 29, 2021
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Koichi Matsuno, Fremont, CA (US);
Johann Alsmeier, San Jose, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/35 (2023.02);
Abstract
Two types of support pillar structures are formed in a staircase region of an alternating stack of insulating layers and sacrificial material layers. First-type support pillar structures are formed in areas distal from backside trenches to be subsequently formed, and second-type support pillar structures may be formed in areas proximal to the backside trenches. The second-type support pillar structures may be formed as dielectric support pillar structures, or may be formed with at least one additional dielectric spacer.