For the Inventor, By the Inventor

Enter assignee name

Milpitas, CA, United States of America

Sandisk 3d LLC

USPTO Granted Patents = 669

EPO Patents = 51

Forward Citations = 11,500

Loading Chart...

Loading Chart...

186 inventors (with patents filed for the assignee):

Roy E Scheuerlein (182 out of 270 patents)

Luca Giovanni Fasoli (79 out of 94 patents)

S Brad Herner (68 out of 95 patents)

4. Yun Yu Wang (59 out of 256 patents)

5. Christopher John Petti (52 out of 157 patents)

6. Tanmay Kumar (42 out of 85 patents)

7. Imran Hashim (41 out of 108 patents)

8. Yung-Tin Chen (36 out of 53 patents)

9. Tony P Chiang (35 out of 268 patents)

10. April Dawn Schricker (33 out of 55 patents)

11. Takeshi Yamaguchi (33 out of 135 patents)

12. Tim Minvielle (33 out of 47 patents)

13. Steven J Radigan (33 out of 38 patents)

14. Tyler J Thorp (32 out of 69 patents)

15. Tianhong Yan (31 out of 70 patents)

Core Competencies:

Resistive Random Access Memory

Nonvolatile Memory Device

Vertical Field Effect Transistor

Conductive Barriers

Atomic Layer Deposition

Three-Dimensional Memory

Multi-Level Memory Array

Current Limiting Elements

Trench Multilevel Contact

Vertical Bit Line Architecture

Defect Profiling

Memory Cell Programming

669 patents: Sort by Forward Citations

1. 9786368 - Two stage forming of resistive random access memory cells (2017-10-10),

2. 9543516 - Method for forming a doped metal oxide for use in resistive switching memory elements (2017-01-10),

3. 9425394 - Doped oxide dielectrics for resistive random access memory cells (2016-08-23),

4. 9343673 - Method for forming metal oxides and silicides in a memory device (2016-05-17),

5. 9343507 - Dual channel vertical field effect transistor including an embedded electrode (2016-05-17),

6. 9331088 - Transistor device with gate bottom isolation and method of making thereof (2016-05-03),

7. 9318533 - Methods and systems to reduce location-based variations in switching characteristics of 3D ReRAM arrays (2016-04-19),

8. 9318194 - Apparatus and methods for sensing hard bit and soft bits (2016-04-19),

9. 9299928 - Nonvolatile memory device having a current limiting element (2016-03-29),

10. 9299926 - Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element (2016-03-29),

11. 9281029 - Non-volatile memory having 3D array architecture with bit line voltage control and methods thereof (2016-03-08),

12. 9276210 - Conductive barriers for ternary nitride thin-film resistors (2016-03-01),

13. 9276203 - Resistive switching layers including Hf-Al-O (2016-03-01),

14. 9275727 - Multi-level memory array having resistive elements for multi-bit data storage (2016-03-01),

15. 9269902 - Embedded resistors for resistive random access memory cells (2016-02-23),

SanDisk 3D LLC specializes in the production of cutting-edge three-dimensional (3D) memory storage devices. As a leading provider of flash memory solutions, SanDisk 3D revolutionizes data storage with its advanced 3D technology, delivering high performance, reliability, and capacity in compact designs. With a strong emphasis on research and development, SanDisk 3D continues to innovate and push the boundaries of memory storage, catering to diverse industries including consumer electronics, data centers, and automotive systems.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

669 Patents

#9 in Milpitas, CA

#174 in California

#726 in US

#1,453 in the World

Milpitas, CA, United States of America

Sandisk 3d LLC

Forward Citations = 11,500

186 inventors:

Roy E Scheuerlein (182 out of 270 patents)

Luca Giovanni Fasoli (79 out of 94 patents)

S Brad Herner (68 out of 95 patents)

4. Yun Yu Wang (59 out of 256 patents)

5. Christopher John Petti (52 out of 157 patents)

Please report any incorrect information to support@idiyas.com

Loading…