The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2016
Filed:
Mar. 12, 2014
Applicant:
Sandisk 3d Llc, Milpitas, CA (US);
Inventor:
Seje Takaki, Yokkaichi, JP;
Assignee:
SANDISK 3D LLC, Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 27/24 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01); H01L 27/112 (2006.01); H01L 29/792 (2006.01); H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 45/00 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 27/1157 (2013.01); H01L 27/11273 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01); H01L 27/249 (2013.01); H01L 27/2454 (2013.01); H01L 29/1033 (2013.01); H01L 29/42356 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/7889 (2013.01); H01L 29/7926 (2013.01); H01L 29/4925 (2013.01); H01L 29/4983 (2013.01); H01L 45/04 (2013.01); H01L 45/1226 (2013.01); H01L 45/146 (2013.01);
Abstract
A device is disclosed including one or more field effect transistors, each field effect transistor including: an elongated drain contact line including an electrically conductive material extending along a first horizontal direction; a drain including a first conductivity type semiconductor region overlaying the drain contact line; a source including a the first conductivity type semiconductor region located above the drain; and a gate extending vertically between the drain and the source. Each field effect transistor may include a first channel and a second channel, each including a second conductivity type