The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Jun. 27, 2014
Applicants:
Intermolecular Inc., San Jose, CA (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
Sandisk 3d Llc, Milpitas, CA (US);
Inventors:
Jinhong Tong, Santa Clara, CA (US);
Randall Higuchi, San Jose, CA (US);
Imran Hashim, Saratoga, CA (US);
Vidyut Gopal, Sunnyvale, CA (US);
Assignees:
Intermolecular, Inc., San Jose, CA (US);
SanDisk 3D LLC, Milpitas, CA (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1608 (2013.01); H01L 45/04 (2013.01); H01L 45/146 (2013.01); H01L 45/1616 (2013.01); H01L 45/1633 (2013.01); H01L 45/1658 (2013.01);
Abstract
Methods for producing RRAM resistive switching elements having reduced forming voltage include doping to create oxygen deficiencies in the dielectric film. Oxygen deficiencies in a dielectric film promote formation of conductive pathways.
Tong, Jinhong. (2017). Method for forming a doped metal oxide for use in resistive switching memory elements (U.S. Patent No. 9543516). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9543516
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile