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For the Inventor, By the Inventor

Santa Clara, CA, United States of America

Jinhong Tong

This inventor holds 40 USPTO granted patents and 4 published patent applications, primarily in Resistive Switching Memory. Top assignees: Intermolecular, Inc., Kabushiki Kaisha Toshiba, Sandisk 3D LLC. Active years: 2009-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jinhong Tong. Retrieved from https://idiyas.com/inventor/jinhong-tong

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 40 

% Patents Active = 25.0

Average Co-Inventor Count = 3.4

ph-index = 8

Forward Citations = 615(Granted Patents)


Location History:

  • San Jose, CA (US) (2011 - 2012)
  • Santa Clara, CA (US) (2009 - 2017)

Company Filing History:

goldMedal38 out of 726 
 
Intermolecular, Inc.
 patents
silverMedal4 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents
bronzeMedal4 out of 669 
 
Sandisk 3D LLC
 patents
4. 1 out of 5,671 
 
Globalfoundries Inc.
 patents
5. 1 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 2009-2017

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Areas of Expertise:
Resistive Switching
Memory Elements
Atomic Layer Deposition
Substrate Processing
Hafnium Oxide
Electroless Deposition
Doped Metal Oxide
Nonvolatile Memory
Fluorinated Hafnium
Zinc Passivation
Copper Adhesion Promoters
Multi-Layer Substrate
40 patents (USPTO):Explore Patents
1. 9761800 - Method for reducing forming voltage in resistive random access memory (2017-09-12),
2. 9543516 - Method for forming a doped metal oxide for use in resistive switching memory elements (2017-01-10),
3. 9330928 - Methods for selective etching of a multi-layer substrate (2016-05-03),
4. 9276203 - Resistive switching layers including Hf-Al-O (2016-03-01),
5. 9245848 - Methods for coating a substrate with an amphiphilic compound (2016-01-26),
6. 9178145 - Methods for forming resistive switching memory elements (2015-11-03),
7. 9178031 - Methods of atomic-layer deposition of hafnium oxide/erbium oxide bi-layer as advanced gate dielectrics (2015-11-03),
8. 9029233 - Resistive-switching memory elements having improved switching characteristics (2015-05-12),
9. 9023137 - Electroless deposition of platinum on copper (2015-05-05),
10. 8975613 - Resistive-switching memory elements having improved switching characteristics (2015-03-10),
11. 8889479 - Nonvolatile memory elements with metal-deficient resistive-switching metal oxides (2014-11-18),
12. 8871860 - Methods for coating a substrate with an amphiphilic compound (2014-10-28),
13. 8859427 - Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processing (2014-10-14),
14. 8846543 - Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics (2014-09-30),
15. 8822265 - Method for reducing forming voltage in resistive random access memory (2014-09-02),

Title: The Innovative Journey of Jinhong Tong

Introduction: Jinhong Tong, a visionary inventor based in Santa Clara, CA, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Jinhong Tong holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his commitment to pushing the boundaries of innovation.

Career Highlights: With a background in computer science and engineering, Jinhong Tong has had a successful career working for leading tech companies in Silicon Valley, where he honed his skills and expertise in developing cutting-edge technologies.

Collaborations: Throughout his career, Jinhong Tong has collaborated with top researchers, engineers, and scientists to bring his ideas to life, fostering a culture of innovation and creativity in the tech industry.

Conclusion: Jinhong Tong's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and entrepreneurs in the ever-evolving world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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