The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Nov. 20, 2013
Applicant:
Intermolecular Inc., San Jose, CA (US);
Inventors:
Jinhong Tong, Santa Clara, CA (US);
Frederick Carlos Fulgenico, San Jose, CA (US);
ShouQian Shao, Fremont, CA (US);
Assignee:
Intermolecular, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); C23F 1/00 (2006.01); C23F 3/00 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 45/00 (2006.01); H01L 21/311 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3065 (2013.01); H01L 21/32134 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/146 (2013.01); H01L 45/16 (2013.01); H01L 45/1675 (2013.01); H01L 21/31116 (2013.01); H01L 27/2409 (2013.01); H01L 27/2463 (2013.01);
Abstract
A method is disclosed for the selective etching of a multi-layer metal oxide stack comprising a platinum layer on a TiN layer on an HfOor ZrOlayer on a substrate. In some embodiments, the method comprises a physical sputter process to selectively etch the platinum layer, followed by a plasma etch process comprises CHFand oxygen to selectively etch the TiN, HfOor ZrOlayers with respect to the substrate.