For the Inventor, By the Inventor

Enter assignee name

San Jose, CA, United States of America

Intermolecular, Inc.

USPTO Granted Patents = 726

EPO Patents = 1

Trademarks = 4

Forward Citations = 4,033

Loading Chart...

Loading Chart...

256 inventors (with patents filed for the assignee):

Tony P Chiang (211 out of 268 patents)

Yun Yu Wang (100 out of 256 patents)

Prashant B Phatak (88 out of 88 patents)

4. Sandra Guy Malhotra (85 out of 113 patents)

5. Imran Hashim (77 out of 108 patents)

6. Chi-I Lang (60 out of 97 patents)

7. Dipankar Pramanik (60 out of 125 patents)

8. Hanhong Chen (53 out of 69 patents)

9. Zhi-Wen Sun (51 out of 59 patents)

10. Pragati Kumar (50 out of 52 patents)

11. Hiroyuki Ode (46 out of 53 patents)

12. Minh Le (41 out of 66 patents)

13. Wim Deweerd (39 out of 41 patents)

14. Jinhong Tong (38 out of 40 patents)

15. David E Lazovsky (38 out of 56 patents)

Core Competencies:

Thin Film Deposition

Memory Arrays

Low-Emissivity Coatings

Resistive Random Access Memory

Atomic Layer Deposition

Superconducting Circuits

Electrochromic Materials

Solid-State Batteries

Transparent Conductive Oxides

Doped Metal Oxides

Anti-Reflection Coatings

Molecular Self-Assembly

726 patents: Sort by Forward Citations

1. 11139186 - Thin film deposition in a high aspect ratio feature (2021-10-05),

2. 10833263 - Current compliance layers and memory arrays comprising thereof (2020-11-10),

3. 10580978 - Current compliance layers and memory arrays comprising thereof (2020-03-03),

4. 10364497 - Vapor based site-isolated processing systems and methods (2019-07-30),

5. 9831100 - Solution based etching of titanium carbide and titanium nitride structures (2017-11-28),

6. 9790127 - Method to generate high LSG low-emissivity coating with same color after heat treatment (2017-10-17),

7. 9786368 - Two stage forming of resistive random access memory cells (2017-10-10),

8. 9761800 - Method for reducing forming voltage in resistive random access memory (2017-09-12),

9. 9722049 - Methods for forming crystalline IGZO with a seed layer (2017-08-01),

10. 9703024 - Systems, methods, and apparatus for production coatings of low-emissivity glass including a ternary alloy (2017-07-11),

11. 9680092 - Current selectors formed using single stack structures (2017-06-13),

12. 9620205 - All around electrode for novel 3D RRAM applications (2017-04-11),

13. 9607904 - Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices (2017-03-28),

14. 9593414 - Hydrogenated amorphous silicon dielectric for superconducting devices (2017-03-14),

15. 9543516 - Method for forming a doped metal oxide for use in resistive switching memory elements (2017-01-10),

INTERMOLECULAR, Inc. is a leading materials informatics company that enables customers to enhance their research and development (R&D) productivity and speed. They provide advanced R&D services, software platforms, and collaborative development programs to help customers accelerate the discovery, development, and commercialization of new materials for various industries including semiconductor, display, energy, and more.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 30 2025

726 Patents

#28 in San Jose, CA

#163 in California

#677 in US

#1,340 in the World

San Jose, CA, United States of America

Intermolecular, Inc.

Forward Citations = 4,033

256 inventors:

Tony P Chiang (211 out of 268 patents)

Yun Yu Wang (100 out of 256 patents)

Prashant B Phatak (88 out of 88 patents)

4. Sandra Guy Malhotra (85 out of 113 patents)

5. Imran Hashim (77 out of 108 patents)

Please report any incorrect information to support@idiyas.com

Loading…