For the Inventor, By the Inventor

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San Jose, CA, United States of America

Intermolecular, Inc.

USPTO Granted Patents = 726

% Expired Patents = 79.9

EPO Patents = 1

Trademarks = 4

Forward Citations = 4,145

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256 inventors (with patents filed for the assignee):

Tony P Chiang (212 out of 268 patents)

Yun Yu Wang (101 out of 257 patents)

Prashant B Phatak (88 out of 88 patents)

4. Sandra Guy Malhotra (85 out of 113 patents)

5. Imran Hashim (78 out of 108 patents)

6. Dipankar Pramanik (61 out of 125 patents)

7. Chi-I Lang (60 out of 99 patents)

8. Hanhong Chen (53 out of 76 patents)

9. Zhi-Wen Sun (51 out of 59 patents)

10. Pragati Kumar (50 out of 52 patents)

11. Hiroyuki Ode (46 out of 53 patents)

12. Minh Le (41 out of 66 patents)

13. Wim Deweerd (39 out of 41 patents)

14. Jinhong Tong (38 out of 40 patents)

15. David E Lazovsky (38 out of 59 patents)

Core Competencies:

Low-Emissivity Glass

Resistive Memory

Thin Film Deposition

Electrochromic Materials

Superconducting Devices

Current Selectors

Doped Metal Oxides

Transparent Conductive Oxides

Nonvolatile Memory

Atomic Layer Deposition

Silicon Dielectrics

Combinatorial Methods

726 patents: Sort by Forward Citations

1. 11139186 - Thin film deposition in a high aspect ratio feature (2021-10-05),

2. 10833263 - Current compliance layers and memory arrays comprising thereof (2020-11-10),

3. 10580978 - Current compliance layers and memory arrays comprising thereof (2020-03-03),

4. 10364497 - Vapor based site-isolated processing systems and methods (2019-07-30),

5. 9831100 - Solution based etching of titanium carbide and titanium nitride structures (2017-11-28),

6. 9790127 - Method to generate high LSG low-emissivity coating with same color after heat treatment (2017-10-17),

7. 9786368 - Two stage forming of resistive random access memory cells (2017-10-10),

8. 9761800 - Method for reducing forming voltage in resistive random access memory (2017-09-12),

9. 9722049 - Methods for forming crystalline IGZO with a seed layer (2017-08-01),

10. 9703024 - Systems, methods, and apparatus for production coatings of low-emissivity glass including a ternary alloy (2017-07-11),

11. 9680092 - Current selectors formed using single stack structures (2017-06-13),

12. 9620205 - All around electrode for novel 3D RRAM applications (2017-04-11),

13. 9607904 - Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices (2017-03-28),

14. 9593414 - Hydrogenated amorphous silicon dielectric for superconducting devices (2017-03-14),

15. 9543516 - Method for forming a doped metal oxide for use in resistive switching memory elements (2017-01-10),

INTERMOLECULAR, Inc. is a leading materials informatics company that enables customers to enhance their research and development (R&D) productivity and speed. They provide advanced R&D services, software platforms, and collaborative development programs to help customers accelerate the discovery, development, and commercialization of new materials for various industries including semiconductor, display, energy, and more.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 22 2026

Intermolecular, Inc.

726 Patents

#30 in San Jose, CA

#162 in California

#693 in US

#1,369 in the World

San Jose, CA, United States of America

Intermolecular, Inc.

Forward Citations = 4,145

256 inventors:

Tony P Chiang (212 out of 268 patents)

Yun Yu Wang (101 out of 257 patents)

Prashant B Phatak (88 out of 88 patents)

4. Sandra Guy Malhotra (85 out of 113 patents)

5. Imran Hashim (78 out of 108 patents)

Please report any incorrect information to [email protected]

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