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San Jose, CA, United States of America

Intermolecular, Inc.

USPTO Granted Patents = 726

% Expired Patents = 79.9

EPO Patents = 1

Trademarks = 4

Forward Citations = 4,145

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256 inventors (with patents filed for the assignee):

Tony P Chiang (212 out of 268 patents)

Yun Yu Wang (101 out of 257 patents)

Prashant B Phatak (88 out of 88 patents)

4. Sandra Guy Malhotra (85 out of 113 patents)

5. Imran Hashim (78 out of 108 patents)

6. Dipankar Pramanik (61 out of 125 patents)

7. Chi-I Lang (60 out of 99 patents)

8. Hanhong Chen (53 out of 77 patents)

9. Zhi-Wen Sun (51 out of 59 patents)

10. Pragati Kumar (50 out of 52 patents)

11. Hiroyuki Ode (46 out of 53 patents)

12. Minh Le (41 out of 66 patents)

13. Wim Deweerd (39 out of 41 patents)

14. Jinhong Tong (38 out of 40 patents)

15. David E Lazovsky (38 out of 59 patents)

Core Competencies:

Low-Emissivity Glass

Resistive Memory

Thin Film Deposition

Electrochromic Materials

Superconducting Devices

Current Selectors

Doped Metal Oxides

Transparent Conductive Oxides

Nonvolatile Memory

Atomic Layer Deposition

Silicon Dielectrics

Combinatorial Methods

726 patents: Sort by Forward Citations

1. 11139186 - Thin film deposition in a high aspect ratio feature (2021-10-05),

2. 10833263 - Current compliance layers and memory arrays comprising thereof (2020-11-10),

3. 10580978 - Current compliance layers and memory arrays comprising thereof (2020-03-03),

4. 10364497 - Vapor based site-isolated processing systems and methods (2019-07-30),

5. 9831100 - Solution based etching of titanium carbide and titanium nitride structures (2017-11-28),

6. 9790127 - Method to generate high LSG low-emissivity coating with same color after heat treatment (2017-10-17),

7. 9786368 - Two stage forming of resistive random access memory cells (2017-10-10),

8. 9761800 - Method for reducing forming voltage in resistive random access memory (2017-09-12),

9. 9722049 - Methods for forming crystalline IGZO with a seed layer (2017-08-01),

10. 9703024 - Systems, methods, and apparatus for production coatings of low-emissivity glass including a ternary alloy (2017-07-11),

11. 9680092 - Current selectors formed using single stack structures (2017-06-13),

12. 9620205 - All around electrode for novel 3D RRAM applications (2017-04-11),

13. 9607904 - Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices (2017-03-28),

14. 9593414 - Hydrogenated amorphous silicon dielectric for superconducting devices (2017-03-14),

15. 9543516 - Method for forming a doped metal oxide for use in resistive switching memory elements (2017-01-10),

Company Overview

Intermolecular, Inc., based in San Jose, California, specializes in advanced materials and technologies, particularly in the field of low-emissivity coatings. The company focuses on developing innovative solutions for low-emissivity glass, which enhances energy efficiency in buildings and vehicles. Their expertise extends to resistive memory, thin film deposition, and electrochromic materials, contributing to advancements in superconducting devices and transparent conductive oxides. Intermolecular is committed to pushing the boundaries of material science to meet evolving industry needs.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 13 2026

726 Patents

#30 in San Jose, CA

#162 in California

#693 in US

#1,369 in the World

San Jose, CA, United States of America

Intermolecular, Inc.

Forward Citations = 4,145

256 inventors:

Tony P Chiang (212 out of 268 patents)

Yun Yu Wang (101 out of 257 patents)

Prashant B Phatak (88 out of 88 patents)

4. Sandra Guy Malhotra (85 out of 113 patents)

5. Imran Hashim (78 out of 108 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Intermolecular, Inc.. Retrieved from https://idiyas.com/company/intermolecular

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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