The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Dec. 31, 2013
Intermolecular, Inc., San Jose, CA (US);
Sergey Barabash, San Jose, CA (US);
Chris Kirby, Gambrills, MD (US);
Dipankar Pramanik, Saratoga, CA (US);
Andrew Steinbach, San Jose, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Northrop Grumman Systems Corporation, Falls Church, VA (US);
Abstract
Amorphous silicon (a-Si) is hydrogenated for use as a dielectric (e.g., an interlayer dielectric) for superconducting electronics. A hydrogenated a-Si layer is formed on a substrate by CVD or sputtering. The hydrogen may be integrated during or after the a-Si deposition. After the layer is formed, it is first annealed in an environment of high hydrogen chemical potential and subsequently annealed in an environment of low hydrogen chemical potential. Optionally, the a-Si (or an H-permeable overlayer, if added) may be capped with a hydrogen barrier before removing the substrate from the environment of low hydrogen chemical potential.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile