San Jose, CA, United States of America

Sergey V Barabash

This inventor holds 22 USPTO granted patents and 7 published patent applications, primarily in Resistive Memory Technology. Top assignees: Intermolecular, Inc., Northrop Grumman Systems Corporation, Elpida Memory, Inc.. Active years: 2014-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sergey V Barabash. Retrieved from https://idiyas.com/inventor/sergey-v-barabash

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 22 

% Patents Active = 18.2

Average Co-Inventor Count = 2.6

ph-index = 3

Forward Citations = 46(Granted Patents)


Company Filing History:


Years Active: 2014-2020

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Areas of Expertise:
Resistive Random Access Memory
Superconducting Circuits
High Dielectric Materials
Current Compliance Layers
3D RRAM Applications
Zinc Blende Cadmium
Low-Leakage Devices
Anisotropic Dielectric Layers
Fluorine-Doped Silicon
Molybdenum Dioxide Electrode
Barrier Design
Capacitor Electrode
22 patents (USPTO):Explore Patents

Title: Sergey V Barabash - Innovative Inventor from San Jose

Introduction: Sergey V Barabash is a renowned inventor based in San Jose, CA, known for his groundbreaking contributions to various technological fields.

Latest Patents: Sergey V Barabash holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Sergey V Barabash has worked with leading tech companies, research institutions, and universities, consistently pushing the boundaries of innovation.

Collaborations: Throughout his career, Sergey V Barabash has collaborated with top scientists, engineers, and researchers globally, fostering a culture of creativity and excellence in his projects.

Conclusion: Sergey V Barabash's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and researchers worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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